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In this work, we report high performance GaN-on-Si Metal Insulator Semiconductor High Electron Mobility Transistors using TiAlOand HfZrO as the gate dielectric. We take the advantages of the high dielectric constant TiO2 and high bandgap Al2O3, achieving a low gate leakage current and simultaneously an excellent gate control capability. Ti and Al composition effect on the DC performance is investigated. A HfZrO gate dielectric is also utilized as a reference. fT/fmax of 150/206GHz and 150/250GHz were respectively achieved on TiAlO and HfZrO GaN-on-Si MISHEMTs. Device power performance is also evaluated.

GaN-on-Si Metal Insulator Semiconductor High Electron Mobility Transistors using TiAlOand HfZrO as the gate dielectric

Tuofu Zhama, Peng Cui (February 2024, Workshop of Compound Semiconductor Materials and Devices, 2024)

In this work, we report high performance GaN-on-Si Metal Insulator Semiconductor High Electron Mobility Transistors using TiAlOand HfZrO as the gate dielectric. We took the advantages of the high dielectric constant TiO2 and high bandgap Al2O3, achieving a low gate leakage current and simultaneously an excellent gate control capability. Ti and Al composition effect on the DC performance is investigated. A HfZrO gate dielectric is also utilized as a reference. fT/fmax of 150/206GHz and 150/250GHz were respectively achieved on TiAlO and HfZrO GaN-on-Si MISHEMTs. Device power performance is also evaluated.

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